參數(shù)資料
型號(hào): GS8180D09
廠商: GSI TECHNOLOGY
英文描述: 2Mb x 9Bit Separate I/O Sigma DDR SRAM(2M x 9位獨(dú)立I/O接口雙數(shù)據(jù)速率讀和寫(xiě)模式靜態(tài)ΣRAM)
中文描述: 2MB的x 9Bit分離I / O西格瑪?shù)腄DR SRAM的(2米× 9位獨(dú)立的I / O接口雙數(shù)據(jù)速率讀和寫(xiě)模式靜態(tài)ΣRAM)
文件頁(yè)數(shù): 29/33頁(yè)
文件大小: 874K
代理商: GS8180D09
Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
29/33
2000, Giga Semiconductor, Inc.
A
Advanced Information
GS8180D09/18B-333/300/275/250
JTAG Port Timing Diagram
JTAG Port AC Electrical Characteristics
Parameter
Symbol
Min
Max
Unit
TCK Cycle Time
tTKC
20
ns
TCK Low to TDO Valid
tTKQ
10
ns
TCK High Pulse Width
tTKH
10
ns
TCK Low Pulse Width
tTKL
10
ns
TDI & TMS Set Up Time
tTS
5
ns
TDI & TMS Hold Time
tTH
5
ns
tTKQ
tTS
tTH
tTKH
tTKL
TCK
TMS
TDI
TDO
tTKC
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