參數資料
型號: GS816118AGT-200IT
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 18 CACHE SRAM, 6.5 ns, PQFP100
封裝: TQFP-100
文件頁數: 5/34頁
文件大小: 703K
代理商: GS816118AGT-200IT
Rev: 1.03a 45/2003
13/34
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816118A(T/D)/GS816132A(D)/GS816136A(T/D)
Preliminary
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
WR
R
WR
X
Simple
Synchronous
Operation
Simple
Burst
Synchronou
sOperation
CR
R
CW
CR
Simplified State Diagram
Notes:
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (BA, BB, BC, BD, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
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