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參數(shù)資料
| 型號： | GS816032T-250T |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 512K X 32 CACHE SRAM, 5.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 6/25頁 |
| 文件大?。?/td> | 648K |
| 代理商： | GS816032T-250T |
GS816018/32/36T-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.14 11/2004
14/25
1999, GSI Technology
Note:
These parameters are sample tested.
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 2.5 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
45
pF
Input/Output Capacitance
CI/O
VOUT = 0 V
67
pF
AC Test Conditions
Parameter
Conditions
Input high level
VDD – 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
VDD/2
Output reference level
VDDQ/2
Output load
Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
50% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
50% tKC
VDD + 2.0 V
50%
VDD
VIL
DQ
VDDQ/2
50
30pF*
Output Load 1
* Distributed Test Jig Capacitance
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| GS816036BGT-150 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays |
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| GS816036BGT-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays |
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