參數資料
型號: GMS81C2012K
廠商: HYNIX SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: HYUNDAI MICRO ELECTRONICS 8-BIT SINGLE-CHIP MICROCONTROLLERS
中文描述: 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PDIP64
封裝: SDIP-64
文件頁數: 20/93頁
文件大小: 853K
代理商: GMS81C2012K
GMS81C1404/GMS81C1408
18
June. 2001 Ver 1.2
8.4 DC Electrical Characteristics
(T
A
=-20~85
°
C, V
DD
=2.5~5.5V
,
V
SS
=0V)
,
Parameter
Symbol
Pin
Condition
Specifications
Unit
Min.
Typ.
Max.
Input High Voltage
V
IH1
X
IN
, RESET
0.8 V
DD
-
V
DD
V
V
IH2
Hysteresis Input
1
0.8 V
DD
-
V
DD
V
IH3
Normal Input
0.7 V
DD
-
V
DD
Input Low Voltage
V
IL1
X
IN
, RESET
0
-
0.2 V
DD
V
V
IL2
Hysteresis Input
1
0
-
0.2 V
DD
V
IL3
Normal Input
0
-
0.3 V
DD
Output High Voltage
V
OH
All Output Port
V
DD
=5V, I
OH
=-5mA
V
DD
-1
-
-
V
Output Low Voltage
V
OL
All Output Port
V
DD
=5V, I
OL
=10mA
-
-
1
V
Input Pull-up Current
I
P
RB2, RB3, RD0, RD1 V
DD
=5V
-550
-420
-200
μ
A
Input High
Leakage Current
I
IH1
All Pins (except X
IN
)
V
DD
=5V
-
-
5
μ
A
I
IH2
X
IN
V
DD
=5V
-
-
15
μ
A
Input Low
Leakage Current
I
IL1
All Pins (except X
IN
)
V
DD
=5V
-5
-
-
μ
A
I
IL2
X
IN
V
DD
=5V
-15
-
-
μ
A
Hysteresis
| V
T
|
Hysteresis Input
1
V
DD
=5V
0.5
-
-
V
PFD Voltage
V
PFD1
V
DD
PFD Level = 0
2.5
3.0
3.5
V
V
PFD2
V
DD
PFD Level = 1
2.0
2.5
3.0
Internal RC WDT
Period
T
RCWDT
V
DD
=5V
40
120
μ
S
V
DD
=3V
95
280
Operating Current
I
DD
V
DD
V
DD
=5.5V, f
XIN
=8MHz
-
5
6
mA
V
DD
=3.0V, f
XIN
=4MHz
-
2
3
Wake-up Timer
Mode Current
I
WKUP
V
DD
V
DD
=5.5V, f
XIN
=8MHz
-
1
2
mA
V
DD
=3.0V, f
XIN
=4MHz
-
0.5
1
RCWDT Mode
Current at STOP
Mode
I
RCWDT
V
DD
V
DD
=5.5V
-
-
200
μ
A
V
DD
=3.0V
-
-
100
Stop Mode Current
I
STOP
V
DD
V
DD
=5.5V, f
XIN
=8MHz
-
0.5
3
μ
A
V
DD
=3.0V, f
XIN
=4MHz
-
0.2
1
1. Hysteresis Input: RB2, RB3, RB6, RC3, RC4, RC5, RD0, RD1
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