參數(shù)資料
型號(hào): GA200HS60S
英文描述: 600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak package
中文描述: 600V的直流1千赫的廉政(標(biāo)準(zhǔn))半橋IGBT的- à - Pak封裝
文件頁(yè)數(shù): 6/6頁(yè)
文件大?。?/td> 99K
代理商: GA200HS60S
GA200HS60S
Bulletin I27121 rev. B 07/02
6
www.irf.com
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 07/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
GA 200
H
S
60
S
Device Code
1
2
3
4
5
Ordering Information Table
1
-
Essential Part Number IGBT modules
2
-
Current rating
(200 = 200A)
3
-
Circuit Configuration (H = Half Bridge without f/w diode)
4
-
Int-A-Pak
5
-
Voltage Code
(60 = 600V)
6
-
Speed/ Type
(S = Standard Speed IGBT)
6
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GA200HS60S1 功能描述:IGBT 模塊 200 Volt 200 Amp RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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