參數(shù)資料
型號(hào): FSGS234R
廠商: Intersil Corporation
英文描述: Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N(xiāo)溝道MOS場(chǎng)效應(yīng)管)
中文描述: 抗輻射,抗SEGR N溝道功率MOSFET(抗輻射?溝道馬鞍山場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 6/8頁(yè)
文件大?。?/td> 79K
代理商: FSGS234R
6
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent)
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
Gate to Source Leakage Current
I
GSS
V
GS
=
±
30V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80% Rated Value
Drain to Source On Resistance
r
DS(ON)
Gate Threshold Voltage
V
GS(TH)
I
D
= 1.0mA
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
Test Circuits and Waveforms
(Continued)
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
TEST CONDITIONS
MAX
UNITS
nA
μ
A
V
±
20 (Note 7)
±
25 (Note 7)
±
20% (Note 8)
±
20% (Note 8)
T
C
= 25
o
C at Rated I
D
Screening Information
TEST
JANTXV EQUIVALENT
V
GS(PEAK)
= 20V, L = 0.1mH; Limit = 30A
t
H
= 100ms; V
H
= 25V; I
H
= 1A; LIMIT = 85mV
V
GS
= 45V, t = 250
μ
s
Optional
MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
MIL-PRF-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
All Delta Parameters Listed in the Delta Tests
and Limits Table
MIL-PRF-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 160 hours
10%
MIL-PRF-19500, Group A, Subgroup 2
JANS EQUIVALENT
Unclamped Inductive Switching
Thermal Response
Gate Stress
Pind
Pre Burn-In Tests (Note 9)
V
GS(PEAK)
= 20V, L = 0.1mH; Limit = 30A
t
H
= 100ms; V
H
= 25V; I
H
= 1A; LIMIT = 85mV
V
GS
= 45V, t = 250
μ
s
Required
MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
MIL-PRF-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
All Delta Parameters Listed in the Delta Tests
and Limits Table
MIL-PRF-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 240 hours
5%
MIL-PRF-19500, Group A,
Subgroups 2 and 3
Steady State Gate
Bias (Gate Stress)
Interim Electrical Tests (Note 9)
Steady State Reverse
Bias (Drain Stress)
PDA
Final Electrical Tests (Note 9)
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Tests
PARAMETER
SYMBOL
SOA
V
SD
TEST CONDITIONS
V
DS
= 200V, t = 10ms
t
H
= 500ms; V
H
= 25V; I
H
= 1A
MAX
0.30
125
UNITS
A
mV
Safe Operating Area
Thermal Impedance
FSGS234R
相關(guān)PDF資料
PDF描述
FSGYC063D1 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | SMT
FSGYC063R3 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | SMT
FSGYC063R4 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | SMT
FSGYC065D1 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | SMT
FSGYC065R3 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | SMT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSGS234R3 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 11A I(D) | TO-257AA
FSGS234R4 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 11A I(D) | TO-257AA
F-SGV1/5 功能描述:D-Sub工具與硬件 SLIDE LOCK POST 4-40 8MM PAIR RoHS:否 制造商:3M Electronic Solutions Division 產(chǎn)品:Accessories 類(lèi)型:Strain Relief, 36 Position 用于:Wiremount D-Sub Connectors
F-SGV-1/5-K140 功能描述:D-Sub工具與硬件 SLIDE LOCK POST RoHS:否 制造商:3M Electronic Solutions Division 產(chǎn)品:Accessories 類(lèi)型:Strain Relief, 36 Position 用于:Wiremount D-Sub Connectors
F-SGV1/5-K365 功能描述:D-Sub工具與硬件 SLIDE LOCK POST M3 10.8MM PAIR RoHS:否 制造商:3M Electronic Solutions Division 產(chǎn)品:Accessories 類(lèi)型:Strain Relief, 36 Position 用于:Wiremount D-Sub Connectors