參數(shù)資料
型號： FSGS234R
廠商： Intersil Corporation
英文描述： Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應管)
中文描述： 抗輻射，抗SEGR N溝道功率MOSFET（抗輻射?溝道馬鞍山場效應管）
文件頁數(shù)： 3/8頁
文件大?。?/td> 79K
代理商： FSGS234R
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
t
rr
Q
RR
I
SD
= 11A
I
SD
= 11A, dI
SD
/dt = 100A/
μ
s
-
-
1.2
V
Reverse Recovery Time
-
-
410
ns
Reverse Recovery Charge
-
2.4
-
μ
C
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
GS
= 0, V
DS
= 200V
V
GS
= 12V, I
D
= 11A
V
GS
= 12V, I
D
= 7A
250
-
V
Gate to Source Threshold Volts
(Note 3)
2.0
4.5
V
Gate to Body Leakage
(Notes 2, 3)
-
100
nA
Zero Gate Leakage
(Note 3)
-
25
μ
A
Drain to Source On-State Volts
(Notes 1, 3)
-
2.64
V
Drain to Source On Resistance
(Notes 1, 3)
-
0.230
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
250
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
Single Event Effects Safe Operating Area
SEESOA
Br
37
36
-20
I
60
32
-10
250
Au
82
28
-5
200
Au
82
28
-10
150
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm
2
(Typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
0
0
-20
LET = 60MeV/mg/cm
2
, RANGE = 32
μ
LET = 82MeV/mg/cm
2
, RANGE = 28
μ
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
V
D
200
-4
-8
-12
-16
V
GS
(V)
24
300
250
150
100
50
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
V
D
LET = 82 GOLD
LET = 60 IODINE
LET = 37 BROMINE
240
200
160
120
80
40
0
-30
0
-5
-10
-15
-20
-25
V
GS
(V)
280
-35
-40
-45
-50
FSGS234R
相關PDF資料
PDF描述
FSGYC063D1 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | SMT
FSGYC063R3 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | SMT
FSGYC063R4 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | SMT
FSGYC065D1 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | SMT
FSGYC065R3 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | SMT
相關代理商/技術參數(shù)
參數(shù)描述
FSGS234R3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 11A I(D) | TO-257AA
FSGS234R4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 11A I(D) | TO-257AA
F-SGV1/5 功能描述:D-Sub工具與硬件 SLIDE LOCK POST 4-40 8MM PAIR RoHS:否 制造商:3M Electronic Solutions Division 產(chǎn)品:Accessories 類型:Strain Relief, 36 Position 用于:Wiremount D-Sub Connectors
F-SGV-1/5-K140 功能描述:D-Sub工具與硬件 SLIDE LOCK POST RoHS:否 制造商:3M Electronic Solutions Division 產(chǎn)品:Accessories 類型:Strain Relief, 36 Position 用于:Wiremount D-Sub Connectors
F-SGV1/5-K365 功能描述:D-Sub工具與硬件 SLIDE LOCK POST M3 10.8MM PAIR RoHS:否 制造商:3M Electronic Solutions Division 產(chǎn)品:Accessories 類型:Strain Relief, 36 Position 用于:Wiremount D-Sub Connectors
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