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參數(shù)資料
| 型號： | FSGS234R |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管) |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET（抗輻射?溝道馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 79K |
| 代理商： | FSGS234R |
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSGS234R
250
250
UNITS
V
V
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)
11
7
32
±
30
A
A
A
V
50
20
0.40
30
11
32
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to 150
300
4.4 (Typical)
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
250
-
-
V
Gate Threshold Voltage
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
5.5
V
2.0
-
4.5
V
1.0
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 200V,
V
GS
= 0V
-
-
25
μ
A
μ
A
-
-
250
Gate to Source Leakage Current
I
GSS
V
GS
=
±
30V
-
-
100
nA
-
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 11A
I
D
= 7A,
V
GS
= 12V
-
-
2.64
V
Drain to Source On Resistance
T
C
= 25
o
C
T
C
= 125
o
C
-
0.195
0.230
-
-
0.449
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(12)
Q
gs
Q
gd
Q
g(20)
Q
g(TH)
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
V
DD
= 125V, I
D
= 11A,
R
L
= 11.4
, V
GS
= 12V,
R
GS
= 7.5
-
-
20
ns
Rise Time
-
-
40
ns
Turn-Off Delay Time
-
-
35
ns
Fall Time
-
-
30
ns
Total Gate Charge
V
GS
= 0V to 12V
V
DD
= 125V,
I
D
= 11A
-
26
28
nC
Gate Charge Source
-
10
12
nC
Gate Charge Drain
-
8
10
nC
Gate Charge at 20V
V
GS
= 0V to 20V
V
GS
= 0V to 2V
I
D
= 11A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
40
-
nC
Threshold Gate Charge
-
3
-
nC
Plateau Voltage
-
7
-
V
Input Capacitance
-
1300
-
pF
Output Capacitance
-
200
-
pF
Reverse Transfer Capacitance
-
8
-
pF
Thermal Resistance Junction to Case
-
-
2.2
o
C/W
FSGS234R
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSGS234R3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 11A I(D) | TO-257AA |
| FSGS234R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 11A I(D) | TO-257AA |
| F-SGV1/5 | 功能描述:D-Sub工具與硬件 SLIDE LOCK POST 4-40 8MM PAIR RoHS:否 制造商:3M Electronic Solutions Division 產(chǎn)品:Accessories 類型:Strain Relief, 36 Position 用于:Wiremount D-Sub Connectors |
| F-SGV-1/5-K140 | 功能描述:D-Sub工具與硬件 SLIDE LOCK POST RoHS:否 制造商:3M Electronic Solutions Division 產(chǎn)品:Accessories 類型:Strain Relief, 36 Position 用于:Wiremount D-Sub Connectors |
| F-SGV1/5-K365 | 功能描述:D-Sub工具與硬件 SLIDE LOCK POST M3 10.8MM PAIR RoHS:否 制造商:3M Electronic Solutions Division 產(chǎn)品:Accessories 類型:Strain Relief, 36 Position 用于:Wiremount D-Sub Connectors |
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