參數(shù)資料
型號： FSB50825US
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 電源模塊
英文描述： DC-DC REG PWR SUPPLY MODULE
文件頁數(shù)： 3/8頁
文件大?。?/td> 297K
代理商： FSB50825US
3
www.fairchildsemi.com
FSB50825US Rev. A
FSB50825US
Smart
Powe
rMod
u
le
(SPM)
Electrical Characteristics (T
J = 25°C, VCC=VBS=15V Unless Otherwise Specified)
Inverter Part (Each FRFET Unless Otherwise Specified)
Control Part (Each HVIC Unless Otherwise Specified)
Note:
1. For the measurement point of case temperature TC, please refer to Figure 3 in page 4.
2. BVDSS is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM
. V
PN should be sufficiently less than this value considering the
effect of the stray inductance so that VDS should not exceed BVDSS in any case.
3. tON and tOFF include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the
field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 4 for the switching time definition with the switching test circuit of Figure 5.
4. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 5 for the RBSOA test cir-
cuit that is same as the switching test circuit.
Package Marking & Ordering Information
Symbol
Parameter
Conditions
Min
Typ
Max
Units
BVDSS
Drain-Source Breakdown
Voltage
VIN= 0V, ID = 250μA (Note 2)
250
-
V
ΔBV
DSS/
ΔT
J
Breakdown Voltage Tem-
perature Coefficient
ID = 250μA, Referenced to 25°C
-
0.31
-
V
IDSS
Zero Gate Voltage
Drain Current
VIN= 0V, VDS = 250V
-
250
μA
RDS(on)
Static Drain-Source
On-Resistance
VCC = VBS = 15V, VIN = 5V, ID = 2.0A
-
0.45
Ω
VSD
Drain-Source Diode
Forward Voltage
VCC = VBS = 15V, VIN = 0V, ID = -2.0A
-
1.2
V
tON
Switching Times
VPN = 150V, VCC = VBS = 15V, ID = 2.0A
VIN = 0V 5V
Inductive load L=3mH
High- and low-side FRFET switching
(Note 3)
-
1050
-
ns
tOFF
-
450
-
ns
trr
-
140
-
ns
EON
-
100
-
μJ
EOFF
-
5
-
μJ
RBSOA
Reverse-bias Safe Oper-
ating Area
VPN = 200V, VCC = VBS = 15V, ID = IDP, VDS=BVDSS,
TJ = 150°C
High- and low-side FRFET switching (Note 4)
Full Square
Symbol
Parameter
Conditions
Min
Typ Max
Units
IQCC
Quiescent VCC Current
VCC=15V, VIN=0V Applied between VCC and COM
-
160
μA
IQBS
Quiescent VBS Current
VBS=15V, VIN=0V
Applied between VB(U)-U,
VB(V)-V, VB(W)-W
-
100
μA
UVCCD
Low-side Undervoltage
Protection (Figure 6)
VCC Undervoltage Protection Detection Level
7.4
8.0
9.4
V
UVCCR
VCC Undervoltage Protection Reset Level
8.0
8.9
9.8
V
UVBSD
High-side Undervoltage
Protection (Figure 7)
VBS Undervoltage Protection Detection Level
7.4
8.0
9.4
V
UVBSR
VBS Undervoltage Protection Reset Level
8.0
8.9
9.8
V
VIH
ON Threshold Voltage
Logic High Level
Applied between IN and COM
3.0
-
V
VIL
OFF Threshold Voltage
Logic Low Level
-
0.8
V
IIH
Input Bias Current
VIN = 5V
Applied between IN and COM
-
10
20
μA
IIL
VIN = 0V
-
2
μA
Device Marking
Device
Package
Reel Size
Packing Type
Quantity
FSB50825US
SPM23-BD
330mm
Tape & reel
450
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