參數(shù)資料
型號： FQU6N40C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 400V N-Channel MOSFET
中文描述： 4.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： IPAK-3
文件頁數(shù)： 4/9頁
文件大?。?/td> 623K
代理商： FQU6N40C
Rev. A, October 2003
2003 Fairchild Semiconductor Corporation
F
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※
Notes :
1. V
= 10 V
2. I
D
= 2.25 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
0
※
Notes :
1. Z
(t) = 2.6
℃
/W M ax.
2. D uty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
single pulse
D =0.5
0.02
0.2
0.05
0.1
0.01
Z
θ
(
t
1
, S quare W ave P ulse D uration [sec]
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
25
50
75
100
125
150
0
1
2
3
4
5
I
D
,
T
C
, Case Temperature [
℃
]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
μ
s
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limted by R
DS(on)
※
Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
相關(guān)PDF資料
PDF描述
FQD6N40 400V N-Channel MOSFET
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