參數(shù)資料
型號： FQU3N50C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 500V N-Channel MOSFET
中文描述： 2.5 A, 500 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： IPAK-3
文件頁數(shù)： 2/9頁
文件大小： 1043K
代理商： FQU3N50C
2
www.fairchildsemi.com
FQD3N50C/FQU3N50C Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 58mH, I
AS
= 2.5A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25°C
3. I
SD
≤
2.5A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQD3N50C
FQD3N50CTM
D-PAK
380mm
16mm
2500
FQD3N50C
FQD3N50CTF
D-PAK
380mm
16mm
2500
FQU3N50C
FQU3N50C
I-PAK
-
-
70
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25°C
500
--
--
V
Breakdown Voltage Temperature
Coefficient
--
0.7
--
V/°C
Zero Gate Voltage Drain Current
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
--
--
1
μ
A
μ
A
--
--
10
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
On Characteristics
V
GS(th)
R
DS(on)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 1.25 A
2.0
--
4.0
V
Static Drain-Source
On-Resistance
--
2.1
2.5
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
= 1.25 A
(Note 4)
--
1.5
--
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
280
365
pF
Output Capacitance
--
50
65
pF
Reverse Transfer Capacitance
--
8.5
11
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
V
DD
= 250 V, I
D
= 2.5 A,
R
G
= 25
(Note 4, 5)
--
10
30
ns
Turn-On Rise Time
--
25
60
ns
Turn-Off Delay Time
--
35
80
ns
Turn-Off Fall Time
--
25
60
ns
Total Gate Charge
V
DS
= 400 V, I
D
= 2.5 A,
V
GS
= 10 V
(Note 4, 5)
--
10
13
nC
Gate-Source Charge
--
1.5
--
nC
Gate-Drain Charge
--
5.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
2.5
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
10
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.5 A
V
GS
= 0 V, I
S
= 3 A,
dI
F
/ dt = 100 A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
170
--
ns
Q
rr
Reverse Recovery Charge
--
0.7
--
μ
C
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