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參數(shù)資料
| 型號： | FQT5N20L |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1A I(D) | SOT-223 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 200伏五（巴西）直| 1A條（丁）|的SOT - 223 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 631K |
| 代理商： | FQT5N20L |
F
Rev. A, May 2001
2001 Fairchild Semiconductor Corporation
10
-5
10
-4
10
t
1
, Square W ave P ulse D uration [sec]
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
※
N otes :
1. Z
2. D uty Factor, D =t
1
/t
2
3. T
J M
- T
C
= P
D M
* Z
θ
(t) = 50
℃
/W M ax.
J C
(t)
single pulse
D =0.5
0.02
0.2
0.05
0.1
0.01
Z
θ
J
(
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
I
D
,
T
C
, Case Temperature [
℃
]
10
-1
10
0
10
1
10
2
10
-3
10
-2
10
-1
10
0
10
1
100 ms
DC
10 ms
1 ms100
μ
s
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※
Notes :
1. V
= 10 V
2. I
D
= 0.5 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
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