參數(shù)資料
型號(hào)： FQG4904
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 400V Dual N & P-Channel MOSFET
中文描述： 0.46 A, 400 V, 3 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： DIP-8
文件頁(yè)數(shù)： 1/12頁(yè)
文件大?。?/td> 1158K
代理商： FQG4904
2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002
F
QF E T
TM
FQG4904
400V Dual N & P-Channel MOSFET
General Description
These dual N and P-channel enhancement mode power
field effect transistors are produced using Fairchild’s
proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on half bridge.
Features
N-Channel 0.46A, 400V, R
DS(on)
= 3.0
@ V
GS
= 10 V
P-Channel -0.46A, -400V, R
DS(on)
= 3.0
@ V
GS
= -10 V
Low gate charge ( typical N-Channel 7.6 nC)
( typical P-Channel 20.0 nC)
Fast switching
Improved dv/dt capability
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
N-Channel
400
0.46
0.29
3.68
P-Channel
-400
-0.46
-0.29
-3.68
Units
V
A
A
A
V
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
A
= 25°C)
- Continuous (T
A
= 100°C)
- Pulsed
I
DM
V
GSS
dv/dt
P
D
Drain Curent
Gate-Source Voltage
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)
Operating and Storage Temperature Range
(Note 1)
±
30
(Note 2)
4.5
-4.5
1.6
0.013
- Derate above 25°C
T
J
, T
STG
-55 to +150
Symbol
R
θ
JA
Parameter
Typ
--
Max
78
Units
°C
/
W
Thermal Resistance, Junction-to-Ambient
(Note 5a)
4
3
2
1
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
Pin #1
8-DIP
相關(guān)PDF資料
PDF描述
FQH140N10 100V N-Channel MOSFET
FQH18N50V2 500V N-Channel MOSFET
FQH35N40 400V N-Channel MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQG4904TU 功能描述:MOSFET 400V Dual N & P-Ch QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQH140N10 功能描述:MOSFET 100V N-Channel Q-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQH18N50V2 功能描述:MOSFET 500V N-Channel Adv Q-FET V2 Ser RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQH35N40 功能描述:MOSFET 400V NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQH44N10 功能描述:MOSFET N-CH/100V/48A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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