參數(shù)資料
型號: FQE10N20LC
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 200V Logic N-Channel MOSFET
中文描述: 4 A, 200 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-126
封裝: TO-126, 3 PIN
文件頁數(shù): 3/8頁
文件大小: 895K
代理商: FQE10N20LC
Rev. A, March 2004
2004 Fairchild Semiconductor Corporation
F
0
4
8
Q
G
, Total Gate Charge [nC]
12
16
20
24
28
0
2
4
6
8
10
12
V
DS
= 100V
V
DS
= 40V
V
DS
= 160V
Note : I
D
= 9.5A
V
G
,
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
1400
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250μs Pulse Test
25
I
D
,
V
SD
, Source-Drain voltage [V]
0
5
10
15
20
25
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
= 10V
V
GS
= 5V
Note : T
J
= 25
R
D
D
I
D
, Drain Current [A]
0
2
4
6
8
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 30V
2. 250μs Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
V
Top : 10.0 V
8.0 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
Bottom : 2.5 V
Notes :
1. 250μs Pulse Test
2. T
C
= 25
I
D
,
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
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