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參數(shù)資料
| 型號(hào)： | FQD45N03L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PWM Optimized Power MOSFET |
| 中文描述： | 20 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | TO-252, 3 PIN |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大?。?/td> | 269K |
| 代理商： | FQD45N03L |
2004 Fairchild Semiconductor Corporation
FQD45N03L Rev. B1
F
Figure 5. Transfer Characteristics
Figure 6. Saturation Characteristics
Figure 7. Drain To Source On Resistance vs Gate
Voltage And Drain Current
Figure 8. Normalized Drain To Source On
Resistance vs Junction Temperatrue
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 10. Normalized Drain To Source
Breakdown Voltage vs Junction Temperature
Typical Characteristic
(Continued)
T
C
= 25
°
C unless otherwise noted
0
10
20
30
40
50
1
2
3
4
5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
10
20
30
40
50
0
0.5
1.0
1.5
2.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 5V
μ
s
PULSE DURATION = 80
V
GS
= 3V
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 4V
10
20
30
40
2
4
6
8
10
I
D
= 10A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 20A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
=20A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQD45N03LTF | 功能描述:MOSFET N-Channel MOSFET Logic Level PWM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQD45N03LTM | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQD-4F | 制造商:SR COMPONENTS 功能描述: 制造商:SR Components Inc 功能描述: |
| FQD-4I | 制造商:SR Components Inc 功能描述: |
| FQD4N20 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
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