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參數(shù)資料
| 型號(hào)： | FQD45N03L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PWM Optimized Power MOSFET |
| 中文描述： | 20 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | TO-252, 3 PIN |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 269K |
| 代理商： | FQD45N03L |
2004 Fairchild Semiconductor Corporation
March 2004
FQD45N03L Rev. B1
F
FQD45N03L
N-Channel Logic Level PWM Optimized Power MOSFET
General Description
This device employs a new advanced MOSFET technology
and features low gate charge while maintaining low on-
resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.018
(Typ), V
GS
= 10V
r
DS(ON)
= 0.028
(Typ), V
GS
= 5V
Q
g
(Typ) = 9nC, V
GS
= 5V
Q
gd
(Typ) =3nC
C
ISS
(Typ) =970pF
MOSFET Maximum Ratings
T
C
=25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
θ
JA
=52
o
C)
Pulsed
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
20
20
8
A
A
A
A
W
Figure 4
41
0.33
-55 to 150
P
D
W/
o
C
o
C
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
3
o
C/W
o
C/W
o
C/W
100
52
Device Marking
FQD45N03L
Device
FQD45N03L
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
GATE
SOURCE
DRAIN (FLANGE)
TO-252
S
G
D
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| FQD4N20L | 200V Logic N-Channel MOSFET(漏源電壓為200V、漏電流為3.2A的邏輯N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQD45N03LTF | 功能描述:MOSFET N-Channel MOSFET Logic Level PWM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQD45N03LTM | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQD-4F | 制造商:SR COMPONENTS 功能描述: 制造商:SR Components Inc 功能描述: |
| FQD-4I | 制造商:SR Components Inc 功能描述: |
| FQD4N20 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
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