參數(shù)資料
型號(hào): FQD2N60C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Flasher; Contacts:DPDT; Time Range:1m to 100m/6000 sec.; Mounting Type:Plug-In; Timing Function:Off-On Recycling; Contact Carrying Power:3VA; Supply Voltage:120VAC
中文描述: 1.9 A, 600 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT, DPAK-3
文件頁(yè)數(shù): 4/9頁(yè)
文件大小: 617K
代理商: FQD2N60C
Rev. A, October 2003
2003 Fairchild Semiconductor Corporation
F
Typical Characteristics
(Continued)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
0
Notes :
1. Z
(t) = 2.87
/W M ax.
2. D uty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
single pulse
D =0.5
0.02
0.01
0.2
0.05
0.1
Z
θ
(
t
1
, S quare W ave P ulse D uration [sec]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
D
= = 10 V
R
D
,
D
T
J
, Junction Temperature [
o
C]
10
0
10
V
DS
, Drain-Source Voltage [V]
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10010 ms
DC
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
Figure 7. Breakdown Voltage Variation
vs Temperature
25
50
75
100
125
150
0.0
0.4
0.8
1.2
1.6
2.0
I
D
,
T
C
, Case Temperature [
]
Figure 8. On-Resistance Variation
vs Temperature
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