參數(shù)資料
型號(hào)： FQD2N60C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Flasher; Contacts:DPDT; Time Range:1m to 100m/6000 sec.; Mounting Type:Plug-In; Timing Function:Off-On Recycling; Contact Carrying Power:3VA; Supply Voltage:120VAC
中文描述： 1.9 A, 600 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： ROHS COMPLIANT, DPAK-3
文件頁(yè)數(shù)： 1/9頁(yè)
文件大小： 617K
代理商： FQD2N60C
2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
F
QF E T
TM
FQD2N60C / FQU2N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
1.9A, 600V, R
DS(on)
= 4.7
@V
GS
= 10 V
Low gate charge ( typical 8.5 nC)
Low Crss ( typical 4.3 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
Symbol
V
DSS
I
D
Parameter
FQD2N60C / FQU2N60C
600
1.9
1.14
7.6
±
30
120
1.9
4.4
4.5
2.5
44
0.35
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)*
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
P
D
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
2.87
50
110
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
●
●
●
●
●
▲
!
!
S
!
!
D
G
I-PAK
FQU Series
D-PAK
FQD Series
G
S
D
G
S
D
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQD2N60C_09 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET
FQD2N60CTF 功能描述:MOSFET 600V N-Channel Adv Q-FET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQD2N60CTF_F080 功能描述:MOSFET Trans MOS N-Ch 600V 1.9A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQD2N60CTM 功能描述:MOSFET N-CH/600V/2A/A.QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQD2N60CTM_WS 功能描述:MOSFET 600V 1.9A NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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