PRELIMINARY
FPD4000AF
4W
P
ACKAGED
P
OWER P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filcs.com
Revised:
08/09/04
Email:
sales@filcsi.com
BIASING GUIDELINES
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for
additional information.
Dual-bias circuits are relatively simple to implement, but will require a regulated negative
voltage supply for depletion-mode devices such as the FPD4000AF.
Self-biased circuits employ an RF-bypassed Source resistor to provide the negative Gate-Source
bias voltage, and such circuits provide some temperature stabilization for the device. A nominal
value for circuit development is 0.7
for the recommended 720mA operating point. This
approach will require a DC Source resistor capable of at least 365mW dissipation.
The recommended 720mA bias point is nominally a Class AB mode. A small amount of RF gain
expansion prior to the onset of compression is normal for this operating point.
PACKAGE OUTLINE
(dimensions in millimeters – mm)
All information and specifications subject to change without notice.
PACKAGE MARKING CODE
Example:
f
1ZD
P2F
f
= Filtronic
1ZD = Lot and Date Code
P2F = Status, Part Code, Part Type
Status: D=Development P = Production
Part Code denotes model (e.g. FPD4000AF)
Part Type: F = FET (pHEMT)