參數(shù)資料
型號(hào): FP4050
英文描述: 2-WATT POWER PHEMT
中文描述: 2瓦功率PHEMT器件
文件頁數(shù): 1/2頁
文件大小: 39K
代理商: FP4050
PRELIMINARY DATA SHEET
FP4050
2-W
ATT
P
OWER
PHEMT
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filtronicsolidstate.com
Revised:
10/04/00
FEATURES
48 dBm IP3 at 2 GHz
34 dBm P-1dB at 2 GHz
14 dB Power Gain at 2 GHz
DESCRIPTION AND APPLICATIONS
The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The FP4050 features Si3N4 passivation.
Typical applications include commercial and military high-performance power amplifiers, including
SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and
medium-haul digital radio transmitters. This device is also suitable as a power stage for WLAN and
ISM band spread spectrum applications.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 22 ±3 °C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Output Power @
1 dB Compression
P
1dB
f = 2 GHz; V
DS
= 8V; I
DS
= 50% I
DSS
34
dBm
Power Gain @
1 dB Compression
Saturated Drain-Source Current
G
1dB
f = 2 GHz; V
DS
= 8V; I
DS
= 50% I
DSS
14
dB
I
DSS
V
DS
= 2V; V
GS
= 0V
950
1100
1300
mA
Maximum Drain-Source Current
Transconductance
Pinch-Off Voltage
Gate-Drain Breakdown
Voltage Magnitude
I
MAX
G
M
V
P
|V
BDGD
|
V
DS
= 2V; V
GS
= 1V
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 2 V; I
DS
= 10 mA
2200
880
-1.2
15
mA
mS
V
V
I
GS
= 20 mA
12
Gate-Source Breakdown
Voltage Magnitude
Gate-Source Leakage
Current Magnitude
Thermal Resistivity
|V
BDGS
|
I
GS
= 20 mA
12
15
V
|I
GSL
|
V
GS
= -5 V
0.2
mA
Θ
JC
15
°
C/W
DRAIN
BOND PAD
SOURCE
BOND PAD
(2X)
GATE
BOND PAD
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