參數(shù)資料
型號： FMMT558
廠商： ZETEX PLC
元件分類： 小信號晶體管
英文描述： PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
中文描述： 150 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件頁數(shù)： 1/2頁
文件大小： 122K
代理商： FMMT558
SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 JANUARY 1996
FEATURES
*
Excellent h
FE
characteristics at I
C
=100mA
*
Low saturation voltages
COMPLEMENTARY TYPE FMMT458
PARTMARKING DETAIL
558
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-400
V
Collector-Emitter Voltage
V
CEO
-400
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-500
mA
Continuous Collector Current
I
C
-150
mA
Base Current
I
B
-200
mA
Power Dissipation
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-400
V
I
C
=-100
μ
A
Collector-Emitter Breakdown
Voltage
V
BR(CEO)
-400
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
μ
A
V
CB
=-320V; V
CE
=320V
V
EB
=-4V
Collector Cut-Off Current
I
CBO
; I
CES
I
EBO
-100
nA
Emitter Cut-Off Current
-100
nA
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.2
-0.5
V
V
I
C
=-20mA, I
B
=-2mA *
I
C
=-50mA, I
B
=-6mA *
I
C
=-50mA, I
B
=-5mA *
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
Base-Emitter Turn On Voltage
V
BE(on)
-0.9
V
I
C
=-50mA, V
CE
=-10V *
Static Forward Current Transfer
Ratio
h
FE
100
100
15
300
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V *
I
C
=-100mA, V
CE
=-10V*
Transition Frequency
f
T
50
MHz
I
=-10mA, V
CE
=-20V
f=20MHz
Collector-Base Breakdown
Voltage
C
obo
5
pF
V
CB
=-20V, f=1MHz
Switching times
t
on
t
off
95
1600
ns
ns
I
C
=-50mA, V
=-100V
I
B1
=5mA, I
B2
=-10mA
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FMMT558
C
B
E
3 - 133
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相關代理商/技術參數(shù)
參數(shù)描述
FMMT558 制造商:Diodes Incorporated 功能描述:TRANSISTOR PNP SOT-23
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