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參數(shù)資料
| 型號(hào)： | FMMT449 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN Low Saturation Transistor |
| 中文描述： | 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 194K |
| 代理商： | FMMT449 |
FMMT449
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous. Sourced from Process NB.
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
°C
-55 to +150
Operating and Storage Junction Temperature Range
T
J,
T
stg
A
1
2
Collector Current - Continuous
- Peak Pulse Current
I
C
V
5
Emitter-Base Voltage
V
EBO
V
50
Collector-Base Voltage
V
CBO
V
30
Collector-Emitter Voltage
V
CEO
Units
FMMT449
Parameter
Symbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T
A = 25°C unless otherwise noted
°C/W
250
Thermal Resistance, Junction to Ambient
R
θ
JA
mW
mW/°C
500
4
Total Device Dissipation*
Derate above 25°C
P
D
FMMT449
Units
Max
Characteristic
Symbol
*Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in
2
of 2oz copper.
Page 1 of 2
1998Fairchild Semiconducto Corporation
fmmt449.lwpPrNB revA
F
SuperSOT
TM
-3
C
E
B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FMMT449TA | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMMT449TA-CUT TAPE | 制造商:DIODES 功能描述:FMMT449 Series NPN 1 A 30 V SMT Silicon Medium Power Transistor - SOT-23 |
| FMMT449TC | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMMT451 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-23 |
| FMMT451 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-23 |
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