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參數(shù)資料
| 型號(hào)： | FMMT2369 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS |
| 中文描述： | 采用SOT23 NPN硅平面高速開(kāi)關(guān)晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | FMMT2369 |
SOT23 NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTORS
ISSUE 3 AUGUST 1995
APPLICATIONS
These devices are suitable for use in high speed, low current
switching applications
PARTMARKING DETAILS
FMMT2369
FMMT2369R
FMMTA2369A - P5
FMMTA2369AR - 9A
- 1J
- 9R
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CES
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
40
V
Collector-Emitter Voltage
40
V
Collector-Emitter Voltage
15
V
Emitter-Base Voltage
4.5
V
Continuous Collector Current
200
mA
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
330
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
FMMT2369
MIN.
MAX. MIN.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
V
(BR)CES
40
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio
20
Output Capacitance C
obo
4
Turn-on Time
t
on
12
FMMT2369A UNIT CONDITIONS.
MAX.
40
V
V
(BR)CBO
40
I
C
=10
μ
A, I
E
=0
V
(BR)CEO
15
15
40
4.5
V
V
V
I
C
=10mA, I
B
=0*
I
C
=10
μ
A, V
BE
=0
I
E
=10
μ
A, I
C
=0
V
(BR)EBO
4.5
I
CBO
400
25
nA
V
CB
=20V, I
E
=0
V
CE(sat)
0.25
0.20
V
I
C
=10mA, I
B
=1mA*
V
BE(sat)
0.7
0.85
0.7
0.85
V
I
C
=10mA, I
B
=1mA*
h
FE
40
20
120
40
20
120
I
C
=10mA, V
CE
=1V*
I
C
=10mA, V
CE
=1V, T
amb
=-55°C*
I
C
=100mA, V
CE
=1V*
I
C
=100mA, V
CE
=2V*
V
CB
=5V, I
E
=0, f=140KHz
V
CC
=3V, V
=1.5V I
=10mA,
I
B1
=3mA (See t
ON
circuit)
V
CC
=3V, I
=10mA, I
=3mA
I
B2
=1.5mA(See t
OFF
circuit)
I
=I
= I
=10mA
(See Storage test circuit)
4
12
pF
ns
Turn-off Time
t
off
18
18
ns
Storage Time
t
s
13
13
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
C
B
E
SOT23
FMMT2369
FMMT2369A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FMMT2369-1J | 制造商:ZETEX 制造商全稱(chēng):ZETEX 功能描述:SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS |
| FMMT2369A | 制造商:Diodes Incorporated 功能描述: |
| FMMT2369AR | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | SOT-23 |
| FMMT2369ATA | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMMT2369ATC | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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