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參數(shù)資料
| 型號： | FMMT4123 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR |
| 中文描述： | 采用SOT23 NPN硅平面開關(guān)晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 27K |
| 代理商： | FMMT4123 |
SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 MARCH 94
%
PARTMARKING DETAIL
ZB
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
200
mA
Power Dissipation at T
amb
=25°C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
I
CBO
Emitter Cut-Off Current
I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
SaturationVoltage
Static Forward
Current Transfer Ratio
Transistion Frequency
f
T
Output Capacitance
C
obo
Input Capacitance
C
ibo
Noise Figure
N
MIN.
40
MAX.
UNIT
V
CONDITIONS.
I
C
=10
μ
A
V
(BR)CBO
V
(BR)CEO
30
V
I
C
=1mA*
V
(BR)EBO
5
V
I
E
=10
μ
A
50
50
0.3
nA
nA
V
V
CB
=20V
VEB=3V
I
C
=50mA, I
B
=5mA*
V
CE(sat)
V
BE(sat)
0.95
V
IC=50mA, I
B
=5mA*
h
FE
50
25
250
150
I
C
=2mA, V
CE
=1V*
I
C
=50mA, V
CE
=1V*
I
C
=10mA, V
CE
=20V, f=100MHz
V
CB
=5V, I
E
=0, f=140KHz
V
BE
=0.5V, I
E
=0, f=140KHz
I
=200
μ
A, V
=5V, R
=2k
f=30Hz to 15KHz at 3dB points
I
C
=2mA, V
CE
=1V, f=1KHz
MHz
pF
pF
dB
4
8
6
Small Signal Current
Transfer
SWITCHING CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Delay Time
Rise Time
Storage Time
Fall Time
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
h
fe
50
200
SYMBOL
t
d
t
r
t
s
t
f
TYP.
UNIT
CONDITIONS
V
CC
=3V, V
BE(off)
=0.5V
I
C
B1
V
CC
=3V, I
=10mA
I
B1
=I
B2
=1mA
24
13
125
11
ns
ns
ns
ns
FMMT4123
C
B
E
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FMMT4123TA | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMMT4123TC | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMMT4124 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | SOT-23 |
| FMMT4124LT1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Switching transistors |
| FMMT4124-SOT-23 | 制造商:JIANGSU 制造商全稱:Jiangsu Changjiang Electronics Technology Co., Ltd 功能描述:TRANSISTOR（ NPN ） |
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