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參數(shù)資料
| 型號： | FLM7785-45F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | C-Band Internally Matched FET |
| 中文描述： | C波段內(nèi)部匹配場效應(yīng)管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 179K |
| 代理商： | FLM7785-45F |
C-Band Internally Matched FET
FEATURES
High Output Power: P1dB=46.5dBm(Typ.)
High Gain: G1dB=7.0dB(Typ.)
High PAE:
η
add=32.5%(Typ.)
Broad Band: 7.7~8.5GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
O
C)
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
O
C)
CASE STYLE: IK
1
FLM7785-45F
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
Item
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
V
DS
V
GS
P
T
T
stg
15
-5
115
-65 to +175
V
V
W
O
C
Channel Temperature
T
ch
175
O
C
Power Gain at 1dB G.C.P.
Limit
Typ.
24 -
Item
Symbol
Test Conditions
Unit
Drain Current
Transconductance
Output Power at 1dB G.C.P.
Gain Flatness
I
DSS
g
m
V
p
P
1dB
G
A
S
V
V
dB
dBm
Min.
-
Max.
Drain Current
I
dsr
A
-
16 -
-0.5 -1.5 -3.0
-5.0 -
-
46.0 46.5 -
6.0 7.0 -
-
11
13
V
DS
=10V
f=7.7 - 8.5 GHz
I
DS
(DC)=8.0A(typ.)
Zs=Z
L
=50
Power-added Efficiency
η
add
%
dB
-
32.5 -
-
-
1.6
V
DS
=5V, V
GS
=0V
V
DS
=5V, I
DS
=8.0A
V
DS
=5V, I
DS
=960mA
Pinch-off Voltage
Gate-Source Breakdown Voltage
V
GSO
I
GS
=-960uA
G
1dB
Thermal Resistance
R
th
T
ch
Channel to Case
-
1.1 1.3
O
C/W
Channel Temperature Rise
10V x Ids(DC) x Rth
-
-
100
O
C
DESCRIPTION
The FLM7785-45F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50
system.
RECOMMENDED OPERATING COMDITION (Case Temperature Tc=25
O
C)
Item
Symbol
Condition
Unit
DC Input Voltage
Forward Gate Current
V
DS
I
GF
≤
10
≤
52
≥
-23.2
V
mA
Limit
R
G
=10
Reverse Gate Current
I
GR
R
G
=10
mA
G.C.P.:Gain Compression Point
ESD
Class
III
2000V
~
Edition 1.3
September 2004
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