參數(shù)資料
型號(hào)： FLM7785-6F
廠商： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述： C-Band Internally Matched FET
中文描述： C波段內(nèi)部匹配場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 233K
代理商： FLM7785-6F
1
Edition 1.1
August 2004
FLM7785-6F
C-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
31.2
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.8 mA respectively with
gate resistance of 100
.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
3rd Order Intermodulation
Distortion
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
gm
-
2700
4050
-
2500
-
-0.5
-1.5
-3.0
-5
-
-
7.5
8.5
-
-
31
-
37.5
38.5
-
VDS = 5V, IDS =120mA
IGS = -150
μ
A
VDS = 5V, IDS =1200mA
VDS = 5V, VGS = 0V
VDS =10V,
IDS
=
0.65 IDSS (Typ.),
f = 7.7 ~ 8.5 GHz,
ZS=ZL= 50 ohm
f = 8.5 GHz,
f = 10 MHz
2-Tone Test
Pout = 27.5dBm S.C.L.
mA
mS
V
dB
%
-44
-46
-
dBc
dBm
V
Vp
VGSO
P1dB
G1dB
Idsr
η
add
Drain Current
-
1750
2250
mA
IM3
Gain Flatness
-
-
±
0.6
dB
G
Test Conditions
Unit
Limit
Typ.
Max.
Min.
Channel to Case
Thermal Resistance
-
4.0
4.8
°
C/W
Rth
Tch
10V x Idsr x Rth
Channel Temperature Rise
-
-
80
°
C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE:
IB
DESCRIPTION
The FLM7785-6F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
High Output Power: P1dB= 38.5dBm (Typ.)
High Gain: G1dB= 8.5dB (Typ.)
High PAE:
η
add= 31% (Typ.)
Low IM3= -46dBc@Po = 27.5dBm
Broad Band: 7.7 ~ 8.5GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed
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