- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377115 > FLX257XV (SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.) GaAs FET & HEMT Chips PDF資料下載
參數(shù)資料
| 型號： | FLX257XV |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | GaAs FET & HEMT Chips |
| 中文描述： | 砷化鎵場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 65K |
| 代理商： | FLX257XV |
1
Edition 1.4
October 2004
FLX257XV
GaAs FET & HEMT Chips
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
Symbol
IDSS
gm
-
1000
1500
-
600
-
-1.0
-2.0
-3.5
-5
-
-
6.5
7.5
-
-
31
-
32.5
33.5
-
VDS = 5V, IDS = 50mA
IGS = -50
μ
A
VDS = 5V, IDS = 600mA
VDS = 5V, VGS = 0V
VDS = 10V
IDS
≈
0.6IDSS
f = 10GHz
mA
mS
V
dB
%
dBm
V
Vp
VGSO
P1dB
G1dB
η
add
Thermal Resistance
-
8
10
Rth
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Note:
RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
Channel to Case
°
C/W
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
DESCRIPTION
The FLX257XV chip is a power GaAs FET that is
designed for general purpose applications in the X-Band
frequency range as it provides superior power, gain, and
efficiency.
Eudyna’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
95
40
(Unit:
μ
m)
4
5
Drain
Drain
Drain
Drain
Gate
Gate
Gate
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
Ptot
Tstg
Tch
15
-5
15.0
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with
gate resistance of 200
.
3. The operating channel temperature (Tch) should not exceed 145
°
C.
FEATURES
High Output Power: P1dB= 33.5dBm(Typ.)
High Gain: G1dB= 7.5dB(Typ.)
High PAE:
η
add= 31%(Typ.)
Proven Reliability
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM0206-L | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM0206 | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM1020-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM1030-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM1040-T | DC-DC Converter; Supply Voltage:12V; Output Voltage:12V; Number of Outputs:1; Power Rating:1W; Mounting Type:PC Board Surface Mount; External Depth:6.6mm; External Width:7.7mm; Leaded Process Compatible:Yes RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLX3 02 | 功能描述:LED 光導(dǎo)管 Flexible Lightpipe 2 inch Lg, 2.2mm Dia RoHS:否 制造商:Bivar 產(chǎn)品:Light Pipes 顏色:Clear LED 大小: 主體形狀:Cylindrical 主體長度:0.125 in 材料:Polycarbonate |
| FLX3 04 | 功能描述:LED 光導(dǎo)管 Flexible Lightpipe 4 inch Lg, 2.2mm Dia RoHS:否 制造商:Bivar 產(chǎn)品:Light Pipes 顏色:Clear LED 大小: 主體形狀:Cylindrical 主體長度:0.125 in 材料:Polycarbonate |
| FLX3 06 | 功能描述:LED 光導(dǎo)管 Flexible Lightpipe 6 inch Lg, 2.2mm Dia RoHS:否 制造商:Bivar 產(chǎn)品:Light Pipes 顏色:Clear LED 大小: 主體形狀:Cylindrical 主體長度:0.125 in 材料:Polycarbonate |
| FLX3 08 | 功能描述:LED 光導(dǎo)管 Flexible Lightpipe 8 inch Lg, 2.2mm Dia RoHS:否 制造商:Bivar 產(chǎn)品:Light Pipes 顏色:Clear LED 大小: 主體形狀:Cylindrical 主體長度:0.125 in 材料:Polycarbonate |
| FLX3 12 | 功能描述:LED 光導(dǎo)管 Flexible Lightpipe 12in Lg, 2.2mm Dia RoHS:否 制造商:Bivar 產(chǎn)品:Light Pipes 顏色:Clear LED 大小: 主體形狀:Cylindrical 主體長度:0.125 in 材料:Polycarbonate |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。