參數(shù)資料
型號： FLX257XV
廠商： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述： GaAs FET & HEMT Chips
中文描述： 砷化鎵場效應(yīng)管
文件頁數(shù)： 3/4頁
文件大?。?/td> 65K
代理商： FLX257XV
3
S-PARAMETERS
VDS= 10V, IDS= 600mA
S21
MAG
ANG
FREQUENCY
(MHZ)
S11
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
100
.995
-35.2
14.385
161.0
.007
72.1
.390
-171.2
500
.963
-115.7
7.909
117.0
.020
32.2
.516
-168.2
1000
.953
-145.3
4.423
98.0
.022
18.4
.552
-170.1
2000
.951
-162.8
2.259
80.7
.022
11.8
.579
-169.1
3000
.951
-169.0
1.487
69.1
.022
11.3
.607
-167.1
4000
.953
-172.4
1.089
59.4
.021
13.3
.638
-165.5
5000
.955
-174.6
.846
50.6
.020
16.9
.671
-164.6
6000
.957
-176.3
.681
42.7
.019
22.1
.704
-164.2
7000
.959
-177.6
.562
35.5
.019
28.3
.735
-164.2
8000
.961
-178.8
.472
28.9
.019
35.2
.763
-164.5
9000
.963
-179.8
.402
22.9
.020
42.0
.789
-165.0
10000
.964
179.3
.345
17.5
.021
48.3
.811
-165.7
11000
.966
178.4
.300
12.6
.023
53.8
.831
-166.4
12000
.967
177.6
.262
8.3
.025
58.4
.849
-167.2
13000
.968
176.8
.230
4.4
.027
62.1
.864
-168.0
14000
.969
176.1
.202
1.0
.029
65.1
.878
-168.8
15000
.970
175.4
.179
-1.9
.032
67.5
.889
-169.6
16000
.971
174.7
.158
-4.4
.034
69.3
.900
-170.3
17000
.972
174.0
.140
-6.4
.037
70.8
.909
-171.0
18000
.972
173.3
.124
-7.8
.039
72.0
.916
-171.7
NOTE:*
The data includes bonding wires.
n: number of wires
Gate
n=8 (0.2mm length, 25μm Dia Au wire)
Drain
n=8 (0.2mm length, 25μm Dia Au wire)
FLX257XV
GaAs FET & HEMT Chips
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