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參數(shù)資料
| 型號(hào)： | FLM1414-3F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | Internally Matched Power GaAs FET |
| 中文描述： | 內(nèi)部匹配砷化鎵場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 293K |
| 代理商： | FLM1414-3F |
3
FLM1414-3F
Internally Matched Power GaAs FET
S-PARAMETERS
VDS= 10V, IDS= 900mA
S21
MAG
ANG
FREQUENCY
(MHZ)
S11
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
13800
.455
-48.9
2.070
141.1
.075
132.4
.555
71.5
13900
.417
-62.3
2.158
130.4
.081
122.1
.528
63.6
14000
.384
-81.2
2.237
118.7
.086
107.9
.491
55.1
14100
.343
-101.5
2.288
106.8
.092
94.3
.449
47.2
14200
.329
-125.2
2.313
94.4
.097
80.1
.398
39.6
14300
.321
-151.3
2.306
82.3
.099
66.1
.344
33.1
14400
.347
-174.4
2.272
69.9
.102
50.7
.283
28.3
14500
.376
163.7
2.208
58.3
.104
36.6
.223
25.2
14600
.413
147.0
2.130
46.3
.103
25.0
.174
23.7
14700
.454
131.6
2.045
35.1
.103
10.9
.139
26.5
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
°
+90
°
0
°
-90
°
S21
S12
SCALE FOR |S21|
S
250
100
50
13.8 GHz
13.8 GHz
14.7
14.7
14.5
14.5
14.2
14.2
14.0
14.0
13.8 GHz13.8 GHz
14.7
14.7
14.5
14.5
14.2
14.2
14.0
14.0
10
25
1
2
3
4
0.1
0.2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FLM1414-6F | X, Ku-Band Internally Matched FET |
| FLM1415-3F | Internally Matched Power GaAs FET |
| FLM3135-8F | C-Band Internally Matched FET |
| FLM4450-45F | C-Band Internally Matched FET |
| FLM4450-4F | C-Band Internally Matched FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLM1414-4F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:Internally Matched Power GaAs FET |
| FLM1414-6F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6.5dB, 14.0 14.5GHz, 1650mA, Bulk |
| FLM1414-8C | 制造商:FUJITSU 功能描述:MESFET Transistor, N-CHAN, SOT-469AVAR |
| FLM1414-8F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 14.0 14.5GHz, 2200mA, Bulk |
| FLM1415-3F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:Internally Matched Power GaAs FET |
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