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參數(shù)資料
| 型號： | FLM1415-3F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | Internally Matched Power GaAs FET |
| 中文描述： | 內(nèi)部匹配砷化鎵場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 272K |
| 代理商： | FLM1415-3F |
1
Edition 1.4
August 2004
FLM1415-3F
Internally Matched Power GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
25
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 13.0 and -1.4 mA respectively with
gate resistance of 100
.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
gm
-
1400
2100
-0.5
-1.5
-3.0
33.5
34.5
-
5.0
5.5
-
VDS = 5V, IDS = 70mA
IGS = -70
μ
A
VDS = 5V, IDS = 900mA
VDS = 5V, VGS = 0V
VDS = 10V,
IDS
=
0.6 IDSS(Typ.),
f = 14.5 ~ 15.3 GHz,
ZS = ZL = 50
mA
V
-
1400
-
mS
-5.0
-
-
V
dB
dBm
Vp
VGSO
P1dB
G1dB
Drain Current
-
900
1100
mA
Idsr
η
add
G
Power-Added Efficiency
-
23
-
%
Gain Flatness
-
-
±
0.6
dB
Thermal Resistance
Channel to Case
-
5.0
6.0
°
C/W
Rth
3rd Order Intermodulation
Distortion
f = 15.3GHz,
f = 10MHz
2-Tone Test
Pout = 23.5dBm S.C.L.
-42
-45
-
dBc
IM3
Test Conditions
Unit
Limit
Typ.
Max.
Min.
CASE STYLE: IA
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
10V x Idsr x Rth
Channel Temperature Rise
-
-
66
°
C
Tch
FEATURES
High Output Power: P1dB= 34.5dBm (Typ.)
High Gain: G1dB= 5.5dB (Typ.)
High PAE:
η
add= 23% (Typ.)
Low IM3= -46dBc@Po = 23.5dBm (Typ.)
Broad Band: 14.5 ~ 15.3GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed
DESCRIPTION
The FLM1415-3F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
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