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參數(shù)資料
| 型號(hào)： | FLL21E060IY |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | L,S-band High Power GaAs FET |
| 中文描述： | 升，S波段高功率GaAs場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 305K |
| 代理商： | FLL21E060IY |
FLL21E060IY
L,S-band High Power GaAs FET
3
■
Board Layout
■
Circuit Diagram of the Board
V
GS
V
DS
C1
C2
C5
C8
C6
C7
L1
C9
C10x5
R1
C12C11
C13
C14
C15
R2
C16C17
C18
C19
C4
C3
ε
r=3.5 t=0.8mm
C16C17C18C19
Z1, Z12 9.00mm x 1.78mm Transmission Line
Z2 16.3mm x 1.78mm Transmission Line
Z3 7.00mm x 1.78mm Transmission Line
Z4 6.00mm x 13.0mm Transmission Line
Z5 3.50mm x 0.50mm Transmission Line
Z6 6.00mm x 13.0mm Transmission Line
Z7 23.0mm x 0.50mm Transmission Line
Z8 6.00mm x 25.0mm Transmission Line
Z9 23.0mm x 1.50mm Transmission Line
Z10 9.50mm x 13.0mm Transmission Line
Z11 23.3mm x 1.78mm Transmission Line
C1,C2 10pF
C3,C7 1.0pF
C4,C6 0.75pF
C5,C9 1.5pF
C8 0.5pF
C10 0.1uF
C11,C16 20pF
C12,C17
C13,C18 1000pF
C14,C15 10uF
100nF
C18 22uF
L1 3.3nF
R1 2.0ohm
R2 51ohm
Board
input size
ε
r=3.5 t=0.8mm
50mm x 50mm
output size
ε
r=3.5 t=0.8mm
50mm x 50mm
Z1
Z2
Z3
Z4
Z5
Z6
Z7
C15C14
Z8
Z9
Z10
Z11
Z12
C1
C2
C3
C4
C5
C6 C7C8
C9
C10x5
L1
C11
C12
C13
R2
R1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FLL21E090IK | High Voltage - High Power GaAs FET |
| FLL21E090IY | L,S-band High Power GaAs FET |
| FLL21E135IX | L,S-band High Power GaAs FET |
| FLL300IL-1 | L-Band Medium & High Power GaAs FET |
| FLL300IL-2 | L-Band Medium & High Power GaAs FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLL21E090IK | 制造商:EUDYNA 制造商全稱(chēng):Eudyna Devices Inc 功能描述:High Voltage - High Power GaAs FET |
| FLL21E090IY | 制造商:EUDYNA 制造商全稱(chēng):Eudyna Devices Inc 功能描述:L,S-band High Power GaAs FET |
| FLL21E135IX | 制造商:EUDYNA 制造商全稱(chēng):Eudyna Devices Inc 功能描述:L,S-band High Power GaAs FET |
| FLL21E180IU | 制造商:EUDYNA 制造商全稱(chēng):Eudyna Devices Inc 功能描述:High Voltage - High Power GaAs FET |
| FLL2400IU-2C | 制造商:FUJITSU 功能描述: |
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