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參數(shù)資料
| 型號： | FLL21E090IY |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | L,S-band High Power GaAs FET |
| 中文描述： | 升，S波段高功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 293K |
| 代理商： | FLL21E090IY |
FEATURES
High Voltage Operation (VDS=28V) GaAs FET
High Gain: 15.5dB(typ.) at Pout=43dBm(Avg.)
Broad Frequency Range : 2110 to 2170MHz
High Reliability
DESCRIPTION
The FLL21E090IY is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is targeted for high voltage, low
current operation in digitally modulated base station amplifiers. This
product is ideally suited for W-CDMA and Multi-carrier PCS base station
amplifiers while offering high gain, long term reliability and ease of use.
Edition 1.1
June 2004
1
FLL21E090IY
L,S-band High Power GaAs FET
ABSOLUTE MAXIMUM RATING
Item
Symbol
Condition
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
V
DS
V
GS
P
T
T
stg
T
ch
V
V
W
o
C
o
C
-
-
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
o
C)
Item
Symbol
Condition
Unit
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
V
DS
I
GF
I
GR
T
ch
V
R
G
=2
mA
mA
o
C
R
G
=2
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Min.
-0.1
-5
-
14.5
-
-
-
Typ.
-0.2
-
-33
15.5
26
-35
1.1
Max.
-0.5
-
-30
-
-
-
1.3
Pinch-Off Voltage
Gate-Source Breakdown Voltage
3rd Order Intermodulation Distortion
Power Gain
Drain Efficiency
Adjacent Channel Leakage Power Ratio
Themal Resistance
V
P
V
DS
=5V, I
DS
=151mA
I
GS
=-1.51mA
V
DS
=28V
I
DS
(DC)=750mA
P
out
=43dBm(Avg.)
Note 1
V
V
V
GSO
IM
3
G
P
η
D
ACLR
R
th
dBc
dB
%
dBc
o
C/W
Channel to Case
Note 1 : IM
3
, ACLR and Gain test conditions as follows
IM
3
& Gain : f
0
=2.1325GHz, f
1
=2.1475GHz W-CDMA(3GPP3.4 12-0) BS-1 64ch non clipping modulation measured over 3.84MHz at f
0
-15MHz and f
1
+15MHz.
ACLR : f
0
=2.1325GHz W-CDMA (3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at f
0
+/-5MHz
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
CASE STYLE : IY
CLASS
III
2000V ~
T
C
=25
o
C
(Case Temperature)
Rating
32
-3
134
Limit
155
65 to +175
200
<28
<352
>-31
Unit
Item
Symbol
Condition
Limit
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