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參數(shù)資料
| 型號(hào)： | FLL21E040IK |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | High Voltage - High Power GaAs FET |
| 中文描述： | 高電壓-高功率GaAs場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 366K |
| 代理商： | FLL21E040IK |
FEATURES
High Voltage Operation : VDS=28V
High Gain: 15dB(typ.) at Pout=40dBm(Avg.)
Broad Frequency Range : 2100 to 2200MHz
Proven Reliability
DESCRIPTION
The FLL21E040IK is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is target for high voltage, low
current operation in digitally modulated base station amplifiers. This
product is ideally suited for W-CDMA base station amplifiers while
offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATINGS
Item Symbol Condition
Drain-Source Voltage V
DS
Gate-Source Voltage V
GS
Tc=25
o
C
Total Power Dissipation P
t
Storage Temperature T
stg
Channel Temperature T
ch
Rating Unit
32
-3 V
83.3 W
-65 to +175
200
V
o
C
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item Symbol
Condition Limit Unit
min. Typ. Max.
V
DS
=5V I
DS
=150mA -0.1 -0.2 -0.5 V
Pinch-Off Voltage V
p
Gate-Source Breakdown Voltage V
GSO
I
GS
=-1.5mA -5
-
-
V
3rd Order Intermodulation Distortion IM
3
V
DS
=28V -
-35 -31 dBc
Power Gain Gp
Drain Efficiency
η
d
I
DS(DC)
=500mA 14.0 15.0 -
dB
Pout=40dBm(Avg.)
-
26 -
%
Adjacent Channel Leakage Power Ratio ACLR note -
-36 -
dBc
Thermal Resistance R
th
Channel to Case -
1.6 1.8
o
C/W
Note 1 : IM3 ACLR and Gain test condition as follows:
IM3 & Gain : fo=2.1325GHz, f1=2.1475GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch
non clipping modulation measured over 3.84MHz at fo-15MHz and fI+15MHz.
ACLR : fo=2.1325GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch non clipping modulation,
measured over 3.84MHz at fo+/-5MHz.
Edition 1.2
Mar 2004
1
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
o
C)
Item Symbol Condition
DC Input Voltage V
DS
Forward Gate Current I
GF
Reverse Gate Current I
GR
Channel Temperature T
ch
Limit Unit
<28 V
<176 mA
>-15.9 mA
155
R
G
=2
R
G
=2
o
C
FLL21E040IK
High Voltage - High Power GaAs FET
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| FLL21E045IY | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L,S-band High Power GaAs FET |
| FLL21E060IY | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L,S-band High Power GaAs FET |
| FLL21E090IK | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:High Voltage - High Power GaAs FET |
| FLL21E090IY | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L,S-band High Power GaAs FET |
| FLL21E135IX | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L,S-band High Power GaAs FET |
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