參數(shù)資料
型號(hào): FLF Series
英文描述: High Density FLASH Memory Card 16, 32, 48, 64, 80 MB(16, 32, 48, 64, 80 M字節(jié)高密度閃速存儲(chǔ)器卡)
中文描述: 高密度閃存卡16,32,48,64,80 MB的(16,32,48,64,80米字節(jié)高密度閃速存儲(chǔ)器卡)
文件頁(yè)數(shù): 9/13頁(yè)
文件大?。?/td> 154K
代理商: FLF SERIES
June 2000 Rev. 3 - ECO #12871
9
PCMCIA Flash Memory Card
FLF Series
PC Card Products
SYM
t
WHQV1
Parameter
Word/Byte Program time
Notes Min
2,4
Typ
(1)
Max
6
Units Test Conditions
μs
Effective time per Byte
(using Write Buffer)
μs
t
WHQV3
Byte Program Time (using
Byte program command)
Block Program Time (using
write to buffer command)
Block Erase Time
Erase Suspend Latency
Time to Read
120
2
0.8
sec
Word Program Mode
t
WHQV4
t
WHRH
2
1.0
25
sec
μs
35
Data Write and Erase Performance
(1,3)
Notes:
1. Typical: Nominal voltages and T
A
= 25C.
2. Excludes system overhead.
3. Valid for all speed options.
4. To maximize system performance RDY/BSY# signal should be polled.
VCC = 5V ± 5%, T
A
= 0C to + 70C
SYMBOL
Parameter
Min
35
Max
Unit
μ
s
ns
t
w(RST)
P2
Reset pulse High time
RST Low to reset during
Erase/Program/Lock-bit
Reset Low to output delay
100
t
rec(RST)
t
rec(WEL)
t
WHRL
500
ns
Reset Recovery to WE going Low
1
μ
s
ns
WE High to Rdy/Bsy going low
100
Waveforms for Reset Operation
tw(RST)
P2
RDY/BSY
RST
Valid Output
t
rec
(RST)
t
rec
(WEL)
WE#
Read Operation
Write Operation
t
WHRL
t
WHQV
t
WHRH
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