參數(shù)資料
型號(hào): FLF Series
英文描述: High Density FLASH Memory Card 16, 32, 48, 64, 80 MB(16, 32, 48, 64, 80 M字節(jié)高密度閃速存儲(chǔ)器卡)
中文描述: 高密度閃存卡16,32,48,64,80 MB的(16,32,48,64,80米字節(jié)高密度閃速存儲(chǔ)器卡)
文件頁(yè)數(shù): 6/13頁(yè)
文件大?。?/td> 154K
代理商: FLF SERIES
June 2000 Rev. 3 - ECO #12871
6
PCMCIA Flash Memory Card
FLF Series
PC Card Products
Absolute Maximum Ratings
(2)
Operating Temperature TA (ambient)
Commercial
Storage Temperature
Voltage on any pin relative to VSS
VCC supply Voltage relative to VSS
0°C to +60 °C
-10°C to +70 °C
-0.5V to VCC+0.5V
-0.5V to +7.0V
Note:
Stress greater than those listed under
“Absolute Maximum Ratings” may cause
permanent damage to the device. This is a
stress rating only and functional operation at
these or any other conditions greater than
those indicated in the operational sections of
this specification is not implied. Exposure to
absolute maximum rating conditions for
extended periods may affect reliability.
Symbol
Parameter
Density
(Mbytes)
16,32,48,64,80
Notes Typ
(3)
Max
Units
Test Conditions
ICCR
VCC Read Current
70
110
mA
VCC = VCCmax
tcycle = 200ns
2 memory devices
ICCW
VCC Program
Current
VCC Erase Current
VCC Power-down
Current
16,32,48,64,80
70
120
mA
ICCE
ICCD
16,32,48,64,80
16
32
48
64
80
16
32
48
64
80
70
160
320
480
650
800
0.2
0.4
0.6
0.8
1.0
140
250
500
750
1000
1250
0.4
0.7
1.0
1.3
1.6
mA
μA
2 memory devices
VCC = VCCmax
Control Signals = VCC
Reset = VCC (active)
2
ICCS
(CMOS)
VCC Standby
Current
2
mA
VCC = VCCmax
Control Signals = VCC
Reset = 0V (not active)
Notes:
1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Word wide
operations (2 memory devices activated).
2. Control Signals: CE
1
#, CE
2
#, OE#, WE#.
3. Typical: VCC = 5V, T = +25°C.
CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
DC Characteristics
(1)
Symbol
ILI
Parameter
Notes
1, 2
Min
Max
±20
Units
μA
Test Conditions
VCC = VCCMAX
Vin =VCC or GND
VCC = VCCMAX
Vin =VCC or GND
Input Leakage Current
ILO
Output Leakage
Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
VCC Erase/Program
Lock Voltage
1
±20
μA
VIL
VIH
VOL
VOH
VLKO
1
1
1
1
1
0
0.8
V
V
V
V
V
0.7xVCC VCC+0.5
0.4
VCC
IOL = 3.2mA
IOH = -2.0mA
VCC-0.4
3.25
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exception: Leakage current on control signals with internal pull up resistors (see block diag) will be < 500
μ
A
when VIN=GND
.
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