參數(shù)資料
型號(hào): FDS6676AS
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: 30V N-Channel PowerTrench SyncFET
中文描述: 14500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁數(shù): 3/8頁
文件大小: 542K
代理商: FDS6676AS
3
www.fairchildsemi.com
FDS6676AS Rev. A (X)
F
Notes:
1.
R
R
θ
θ
JA
JC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
3.
FDS6676AS_NL is a lead free product. The FDS6676AS_NL marking will appear on the reel label.
μ
s, Duty Cycle < 2.0%
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
Drain–Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 3.5 A
(Note 2)
V
GS
= 0 V, I
S
= 7 A
(Note 2)
I
F
= 14.5A,
d
iF
/d
t
= 300 A/μs
(Note 3)
0.4
0.5
0.7
V
t
rr
I
RM
Q
rr
Diode Reverse Recovery Time
27
nS
Diode Reverse Recovery Current
1.9
A
Diode Reverse Recovery Charge
26
nC
a) 50°/W when mounted
on a 1 in
pad of 2 oz
copper
b) 105°/W when mounted
on a .04 in
pad of 2 oz
copper
c) 125°/W when mounted
on a minimum pad.
See “SyncFET
Schottky body diode
characteristics” below
Electrical Characteristics
T
A
= 25°C unless otherwise noted (Continued)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
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參數(shù)描述
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FDS6676S 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube