參數(shù)資料
型號(hào)： FDS6574A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 16000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SO-8
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 90K
代理商： FDS6574A
FDS6574A Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= 250
μ
A
20
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
10
mV/
°
C
V
DS
= 16 V,
V
GS
= 8 V,
V
GS
= –8 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 4.5 V,
I
D
= 16 A
V
GS
= 2.5 V,
I
D
= 15 A
V
GS
= 1.8 V,
I
D
= 13 A
V
GS
= 4.5 V, I
D
= 12.5 A,T
J
=125
°
C
V
GS
= 4.5 V, V
DS
= 5 V
I
D
= 250
μ
A
0.4
0.6
1.5
V
Gate Threshold Voltage
–2.7
mV/
°
C
4
4.4
5
5.3
6
7
9
9
m
I
D(on)
On–State Drain Current
40
A
g
FS
Forward Transconductance
V
DS
= 5 V,
I
D
= 16 A
115
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
7657
1432
775
pF
pF
pF
V
DS
= 10V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
19.5
22
173
82
75
9
17
35
36
277
131
105
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V,
V
GS
= 4.5 V, R
GEN
= 6
I
D
= 1 A,
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 16 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
2.1
A
V
SD
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
0.56
1.2
V
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS6574A_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20V N-Channel PowerTrench MOSFET
FDS6575 功能描述:MOSFET SO-8 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6575 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFETP SO-8 ((NW))
FDS6575 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8
FDS6575_01 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench?MOSFET
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