參數(shù)資料
型號(hào)： FDS4885C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual N & P-Channel PowerTrench MOSFET
中文描述： 7.5 A, 40 V, 0.022 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 3/8頁
文件大小： 254K
代理商： FDS4885C
FDS4885C Rev D(W)
Electrical Characteristics
(continued)
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ
Max Units
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
26
11
36
14
45
71
33
30
15
29
5
4
4.6
5
42
20
58
25
72
114
53
48
21
41
ns
t
r
Turn-On Rise Time
ns
t
d(off)
Turn-Off Delay Time
ns
t
f
Turn-Off Fall Time
Q1
V
DD
= 20 V, I
D
= 1 A,
V
GS
= 10V,
R
GEN
= 6
Q2
V
DD
= –20 V, I
D
= –1 A,
V
GS
= –10V, R
GEN
= 6
ns
Q
g
Total Gate Charge
nC
Q
gs
Gate-Source Charge
nC
Q
gd
Gate-Drain Charge
Q1
V
DS
= 20 V, I
D
= 7.5 A, V
GS
= 10 V
Q2
V
DS
= –20 V, I
D
= –6 A,V
GS
= –10 V
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1.3
–1.3
1.2
–1.2
A
V
SD
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
V
GS
= 0 V, I
S
= 1.3 A
V
GS
= 0 V, I
S
= –1.3 A
Q1
I
= 7.5 A, d
iF
/d
t
= 100 A/μs
Q2
I
F
= –6 A, d
iF
/d
t
= 100 A/μs
(Note 2)
(Note 2)
0.7
–0.7
26
26
18
13
V
t
rr
nS
Q
rr
nC
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 78°/W when
mounted on a
0.5 in
2
pad of 2 oz
copper
b) 125°/W when
mounted on a .02 in
2
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
相關(guān)PDF資料
PDF描述
FDS4895C Dual N & P-Channel PowerTrench MOSFET
FDS4897C Dual N & P-Channel PowerTrench MOSFET
FDS4935BZ Dual 30 Volt P-Channel PowerTrench MOSFET
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FDS4935A Dual 30V P-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS4895C 功能描述:MOSFET S08 DUAL NCH & PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4897AC 功能描述:MOSFET 40V Dual N & P Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4897C 功能描述:MOSFET 40V Dual N & P-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4935 功能描述:MOSFET 30V P-CH DUAL PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4935A 功能描述:MOSFET -30V Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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