參數(shù)資料
型號： FDS4885C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual N & P-Channel PowerTrench MOSFET
中文描述： 7.5 A, 40 V, 0.022 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 2/8頁
文件大?。?/td> 254K
代理商： FDS4885C
FDS4885C Rev D(W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Type Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
BV
DSS
T
J
Temperature Coefficient
I
DSS
Zero Gate Voltage Drain
Current
I
GSSF
Gate-Body Leakage, Forward
I
GSSR
Gate-Body Leakage, Reverse V
GS
= –20 V,
V
GS
= 0 V,
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= –250 μA, Referenced to 25
°
C
V
DS
= 32 V,
V
DS
= –32 V,
V
GS
= 20 V,
I
D
= 250
μ
A
I
D
= –250
μ
A
Q1
Q2
Q1
Q2
Q1
Q2
All
All
40
–40
V
Breakdown Voltage
40
–30
mV/
°
C
V
GS
= 0 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
–1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
,
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= –250 μA, Referenced to 25
°
C
V
GS
= 10 V,
V
GS
= 7 V,
V
GS
= 10 V, I
D
= 7.5 A, T
J
= 125
°
C
V
GS
= –10 V,
V
GS
= –4.5 V,
V
GS
= –10 V, I
D
= –6 A, T
J
= 125
°
C
V
DS
= 10 V,
V
DS
= –10 V,
I
D
= 250
μ
A
I
D
= –250 μA
Q1
Q2
Q1
Q2
Q1
2
–1
4
–1.6
–9
5
17
27
26
26
34
37
14
19
5
–3
V
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
mV/
°
C
I
D
= 7.5 A
I
D
= 6.5 A
22
35
36
31
42
47
m
I
D
= –6 A
I
D
= –5.3 A
Q2
g
FS
Forward Transconductance
I
D
= 7.5 A
I
D
=–6 A
Q1
Q2
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
900
1560
200
215
100
110
2
9
pF
C
oss
Output Capacitance
pF
C
rss
Reverse Transfer Capacitance
Q1
V
DS
= 20 V, V
GS
= 0 V, f = 1.0 MHz
Q2
V
DS
= –20 V, V
GS
= 0 V, f = 1.0 MHz
pF
R
G
Gate Resistance
V
GS
= 15 mV,
f = 1.0 MHz
F
相關(guān)PDF資料
PDF描述
FDS4895C Dual N & P-Channel PowerTrench MOSFET
FDS4897C Dual N & P-Channel PowerTrench MOSFET
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FDS4935A Dual 30V P-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS4895C 功能描述:MOSFET S08 DUAL NCH & PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4897AC 功能描述:MOSFET 40V Dual N & P Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4897C 功能描述:MOSFET 40V Dual N & P-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4935 功能描述:MOSFET 30V P-CH DUAL PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4935A 功能描述:MOSFET -30V Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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