參數資料
型號: FDG6303
廠商: Fairchild Semiconductor Corporation
英文描述: Dual N-Channel, Digital FET
中文描述: 雙N溝道,數字場效應管
文件頁數: 4/8頁
文件大小: 226K
代理商: FDG6303
FDG6303N Rev.E
1
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
(continued)
0.1
1
2
5
10
25
40
0.01
0.02
0.05
0.1
0.2
0.5
1
3
V , DRAI N-SOURCE VOLTAGE (V)
I
D
DC
1s
100ms
10s
RDSON LMT
V = 4.5V
SINGLE PULSE
R = 415 °C/W
T = 25°C
JA
10ms
1ms
0.0001
0.001
0.01
0.1
1
10
100
200
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
T - T = P * R (t)
P(pk)
t
1
t
2
R (t) = r(t) * R
R =415
°C/W
JA
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1.
Transient thermal response will change depending on the circuit board design.
0.1
0.3
1
2
5
10
25
3
10
30
70
200
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0V
C ss
C ss
00
0.001
0.01
SINGLE PULSE TIME (SEC)
0.1
1
10
200
10
20
30
40
50
P
SINGLE PULSE
R =415°C/W
T = 25°C
A
JA
0
0.4
0.8
1.2
1.6
2
0
1
2
3
4
5
Q , GATE CHARGE (nC)
V
G
I = 0.5A
10V
15V
V = 5V
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相關代理商/技術參數
參數描述
FDG6303N 功能描述:MOSFET SC70-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6303N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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FDG6303N_D87Z 功能描述:MOSFET Dual N-Ch Digital RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6303N_NL 制造商:Fairchild 功能描述:DUAL MOSFET 25V/0.5A SC70 (LEAD FREE)