參數(shù)資料
型號(hào)： FDG6306P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： CAP CER 15000PF 250V X7R 1206
中文描述： 600 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SC-70, 6 PIN
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 61K
代理商： FDG6306P
February 2001
FDG6306P
P-Channel 2.5V Specified PowerTrench
ò
MOSFET
2001 Fairchild Semiconductor Corporation
FDG6306P Rev C(W)
General Description
This PChannel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications wih a wide range of gate
drive voltage (2.5V – 12V).
Applications
Battery management
Load switch
Features
–0.6 A, –20 V.
R
DS(ON)
= 420 m
@ V
GS
= –4.5 V
R
DS(ON)
= 630 m
@ V
GS
= –2.5 V
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
Compact industry standard SC70-6 surface mount
package
S
G
D
D
G
S
Pin 1
SC70-6
S
G
D
D
G
S
6 or 3
5 or 2
4 or 1
1 or 4
2 or 5
3 or 6
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
–20
±
12
–0.6
–2.0
0.3
–55 to +150
Units
V
V
A
W
°
C
(Note 1)
(Note 1)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
°
C/W
Package Marking and Ordering Information
Device Marking
Device
.06
FDG6306P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDG6306P_D87Z 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6306P_Q 功能描述:MOSFET P-Ch PowerTrench Specified 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6308 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET
FDG6308P 功能描述:MOSFET Dual P-Ch 1.8V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6308P_Q 功能描述:MOSFET Dual P-Ch 1.8V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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