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參數(shù)資料
| 型號： | FDG6308 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | P溝道MOSFET的1.8指定的PowerTrench |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 85K |
| 代理商： | FDG6308 |
October 2000
PRELIMINARY
2000 Fairchild Semiconductor Corporation
FDG6308P Rev B(W)
FDG6308P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
MOSFET
uses
Applications
Battery management
Load switch
Features
–0.6 A, –20 V.
R
DS(ON)
= 0.40
@ V
GS
= –4.5 V
R
DS(ON)
= 0.55
@ V
GS
= –2.5 V
R
DS(ON)
= 0.80
@ V
GS
= –1.8 V
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
Compact industry standard SC70-6 surface mount
package
S
G
D
D
G
S
Pin 1
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
S
G
D
D
G
S
6 or 3
5 or 2
4 or 1
1 or 4
2 or 5
3 or 6
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
P
D
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
–20
±
8
–0.6
–1.8
0.3
–55 to +150
Units
V
V
A
(Note 1)
(Note 1)
W
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
°
C/W
Package Marking and Ordering Information
Device Marking
Device
.08
FDG6308P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDG6308P | 功能描述:MOSFET Dual P-Ch 1.8V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6308P_Q | 功能描述:MOSFET Dual P-Ch 1.8V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6313 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| FDG6313N | 功能描述:MOSFET 25V Dual N-Ch Digital RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6313N_NL | 功能描述:MOSFET 25V Dual N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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