參數(shù)資料
型號(hào): FDFC3N108
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 小信號(hào)晶體管
英文描述: N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode
中文描述: 3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-6
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 111K
代理商: FDFC3N108
FDFC3N108 Rev C (W)
Typical Characteristics
0
1
2
3
4
5
6
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
V
GS
= 4.5V
3.5V
2.5V
1.5V
3.0V
2.0V
0.8
1
1.2
1.4
1.6
1.8
0
1
2
3
4
5
6
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 2.0V
3.5V
4.5
V
3.0V
2.5V
4.0
V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 3.0A
V
GS
= 4.5V
0.03
0.055
0.08
0.105
0.13
0.155
0.18
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 1.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
10
12
0.5
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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