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參數(shù)資料
| 型號(hào)： | FDFM2N111 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Integrated N-Channel PowerTrench MOSFET and Schottky Diode |
| 中文描述： | 4000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 3 X 3 MM, MLP-6 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 289K |
| 代理商： | FDFM2N111 |
August 2005
F
2005 Fairchild Semiconductor Corporation
FDFM2N111 Rev. C
2
(W)
1
FDFM2N111
Integrated N-Channel PowerTrench
MOSFET and Schottky Diode
General Description
FDFM2
N
111 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in a
MicroFET package.
This device is designed specifically as a single package
solution for Standard Buck Converter. It features a fast
switching, low gate charge MOSFET with very low on-state
resistance.
Applications
Standard Buck Converter
Features
4 A, 20 V R
DS(ON)
= 100m
@ V
GS
= 4.5 V
R
DS(ON)
= 150m
@ V
GS
= 2.5 V
Low Profile - 0.8 mm maximun - in the new package
MicroFET 3x3 mm
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GSS
Parameter
Ratings
20
±
12
4
10
20
2
1.7
0.8
-55 to +150
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous (Note 1a)
-Pulsed
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current (Note 1a)
Power dissipation (Steady State) (Note 1a)
Power dissipation (Steady State) (Note 1b)
Operating and Storage Junction Temperature Range
I
D
A
V
RRM
I
O
V
A
P
D
W
T
J
, T
STG
o
C
R
θ
JA
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Ambient (Note 1b)
70
150
o
C/W
o
C/W
Device Marking
2N111
Device
FDFM2N111
Reel Size
7inch
Tape Width
12mm
Quantity
3000 units
5
1
6
2
3
4
MLP 3x3
TOP
BOTTOM
A
A
S/C
S/C
G
D
PIN 1
A
S/C
D
A
S/C
G
C
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDFM2P110 | 功能描述:MOSFET DUAL Pwr MOSFET & SCHOTTKY DIODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFM2P110_0508 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
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| FD-FM2S4 | 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER |
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