參數(shù)資料
型號: FDFC3N108
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode
中文描述: 3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-6
文件頁數(shù): 1/7頁
文件大?。?/td> 111K
代理商: FDFC3N108
January 2004
2004 Fairchild Semiconductor Corporation
FDFC3N108 Rev C (W)
FDFC3N108
N-Channel 1.8V Specified PowerTrench
ò
MOSFET with Schottky Diode
General Description
This N-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It is combined with a low forward drop Schottky that is
isolated from the MOSFET, providing a compact power
solution for battery power management and DC/DC
converter applications.
Applications
Battery management/Charger Application
DC/DC Conversion
Features
3 A, 20 V
R
DS(ON)
= 70 m
@ V
GS
= 4.5 V
R
DS(ON)
= 95 m
@ V
GS
= 2.5 V
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
D1
S2
G1
D2
S1
G2
SuperSOT -6
Pin 1
SuperSOT-6
3
2
1
4
5
6
MOSFET Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
20
±
12
3
12
0.96
0.90
0.70
55 to +150
Units
V
V
A
W
°
C
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Maximum Power Dissipation
(Note 1a)
– Pulsed
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
T
J
, T
stg
Schottky Diode Maximum Ratings
V
RRM
Repetitive Peak reverse voltage
I
O
Average Forward Current
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
.108
FDFC3N108
20
2.0
V
A
(Note 1a)
130
60
(Note 1)
°
C/W
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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