參數(shù)資料
型號： FDB8878
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 48A, 14mOhm
中文描述： 48 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 4/6頁
文件大小： 226K
代理商： FDB8878
F
FDB8878 Rev. A
www.fairchildsemi.com
4
Figure 7. Gate Charge Characteri
4
0
12
20
Q
g
, GATE CHARGE (nC)
8
16
4
6
10
0
V
G
,
8
2
WAVEFORMS IN
ASCENDING ORDER:
ID = 40A
ID = 1A
VDD =15V
stics
Figure 8. Capacitance Characteristics
100
1000
10000
0.1
10
30
10
C
OSS
C
RSS
C
ISS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
1
f = 1MHz
V
GS
= 0V
Figure 9. Unclamped Inductive Switching
Capability
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
500
100
10
1
0.001
0.01
0.1
1
10
100
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
Figure 10.
1
10
100
1000
1
10
100
DC
1ms
100
μ
s
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
10
μ
s
0.1
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
C
Safe Operating Area
Figure 11. Maximum Continuous Drain Current vs
Case Temperature
0
75
150
V
DS
, GATE TO SOURCE VOLTAGE (V)
50
100
125
20
30
50
80
0
I
D
,
70
60
40
10
V
GS
= 10V
V
GS
= 4.5V
R
θ
JC
= 3.17
o
C/W
175
Figure 12. Single Pulse Maximum Power
Dissipation
10
100
P
(
,
t, PULSE WIDTH (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1000
10000
R
θ
= 0.5
o
C/W
T
J
= 25
C
SINGLE PULSE
Typical Characteristics
T
A
= 25°C unless otherwise noted
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