參數(shù)資料
型號(hào)： FDB8878
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 48A, 14mOhm
中文描述： 48 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 226K
代理商： FDB8878
F
FDB8878 Rev. A
www.fairchildsemi.com
3
Typical Characteristics
T
A
= 25°C unless otherwise noted
Figure 1.
0
0.8
2.0
V
DS
, GATE TO SOURCE VOLTAGE (V)
0.4
1.2
1.6
20
30
50
80
0
I
D
,
70
60
40
10
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
10V
5.0V
4.5V
4.0V
3.5V
3.0V
On Region Characteristics
Figure 2.
0
40
I
D
, DRAIN CURRENT (A)
20
60
80
1.4
2.0
0.8
1.8
1.6
1.2
1.0
10V
5.0V
4.5V
4.0V
3.5V
3.0V
R
D
,
D
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
2.2
2.4
On-Resistance Variation with Drain
Current and Gate Voltage
Figure 3.
- 80
40
160
T
J
, JUNCTION TEMPERATURE (
o
C)
0
- 40
80
120
200
1.1
1.5
0.7
R
D
D
1.7
1.3
0.9
I
D
=
40A
V
GS
=10V
On Resistance Variation with
Temperature
Figure 4.
4
2
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
0.03
0.04
0.06
0.01
R
D
,
0.05
0.03
I
D
=40A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
J
=25
o
C
T
J
=175
o
C
On-Resistance Variation with
Gate-to-Source Votlage
Figure 5.
1.0
2.0
5.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
4.0
3.0
20
30
50
80
0
I
D
,
70
60
40
10
V
DS
= 6V
T
A
= 25
o
C
T
A
= -55
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 175
o
C
Transfer Characteristics
Figure 6.
V
SD
, BODY DIODE FORWARD VOLTAGE
0
0.6
1.5
0.9
1.2
0.3
0.1
1.0
100
0.001
I
S
,
10
0.01
V
GS
= 0V
T
A
= 175
o
C
T
A
= 25
o
C
T
A
= - 55
o
C
Body Diode Forward Voltage Variation
With Source Current and Temperature
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