參數(shù)資料
型號(hào)： FDP8880
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET
中文描述： 11 A, 30 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁數(shù)： 1/11頁
文件大?。?/td> 231K
代理商： FDP8880
2005 Fairchild Semiconductor Corporation
FDP8880 / FDB8880 Rev. A
February 2005
www.fairchildsemicom
F
1
FDP8880 / FDB8880
N-Channel PowerTrench
MOSFET
30V, 54A, 11.6m
Features
r
DS(ON)
= 14.5m
, V
GS
= 4.5V, I
D
= 40A
r
DS(ON)
= 11.6m
, V
GS
= 10V, I
D
= 40A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
Applications
DC/DC converters
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
TO-263AB
FDB SERIES
GATE
SOURCE
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
D
G
S
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
相關(guān)PDF資料
PDF描述
FDB8896 N-Channel PowerTrench MOSFET 30V, 93A, 5.7 m ohm
FDC10-48S05W 10 watts of output power from a 2 x 1 x 0.4 inch package
FDC10 10 watts of output power from a 2 x 1 x 0.4 inch package
FDC10-12D05 10 watts of output power from a 2 x 1 x 0.4 inch package
FDC10-12D12 10 watts of output power from a 2 x 1 x 0.4 inch package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDP8880_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET
FDP8896 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP8896_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 92A, 5.9mヘ
FDP8896_F085 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET. (Transferred to alternate site. Please contact local reps fo RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP8N50NZ 功能描述:MOSFET UNIFET2 500V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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