參數(shù)資料
型號: FDB8444
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench㈢ MOSFET 40V, 70A, 5.5mOhm
中文描述: 70 A, 40 V, 9.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 6/7頁
文件大小: 280K
代理商: FDB8444
F
FDB8444 Re
v A2
(W)
www.fairchildsemi.com
6
Figure 11.
-80
-40
T
J
, JUNCTION TEMPERATURE
(
o
C
)
0
40
80
120
160
200
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
GS
=
V
DS
I
D
= 250
μ
A
N
T
Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
-80
-40
0
40
80
120
160
200
0.90
0.95
1.00
1.05
1.10
1.15
I
D
= 250
μ
A
N
B
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 13.
0.1
1
10
100
1000
10000
f = 1MHz
V
GS
= 0V
C
RSS
C
OSS
C
ISS
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
C
50
Capacitance vs Drain to Source
Voltage
Figure 14.
0
20
40
60
80
100
0
2
4
6
8
10
I
D
= 70A
V
DD
= 25V
V
DD
= 20V
V
G
,
Q
g
,
GATE CHARGE(nC)
V
DD
= 15V
Gate Charge vs Gate to Source Voltage
Typical Characteristics
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