- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375765 > FDB8444 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench㈢ MOSFET 40V, 70A, 5.5mOhm PDF資料下載
參數(shù)資料
| 型號： | FDB8444 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET 40V, 70A, 5.5mOhm |
| 中文描述： | 70 A, 40 V, 9.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 280K |
| 代理商： | FDB8444 |
F
FDB8444 Re
v A2
(W)
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 32V
V
GS
= 0V
V
GS
=
±
20V
40
-
-
-
-
-
-
-
-
1
V
μ
A
I
DSS
Zero Gate Voltage Drain Current
T
J
=150°C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 70A, V
GS
= 10V
I
D
= 70A, V
GS
= 10V,
T
J
= 175°C
2
-
2.6
3.9
4
V
r
on
)
Drain to Source On Resistance
5.5
m
-
7
9.9
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
6040
480
290
2
91
7
23
17
20
8035
640
435
-
128
10
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
f = 1MHz
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DD
= 20V,
I
D
= 70A,
DS(
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
40
± 20
70
Figure 4
307
167
1.1
-55 to +175
Units
V
V
A
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (V
GS
= 10V) (Note 1)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient TO-263, lin
2
copper pad area
0.9
43
o
C/W
o
C/W
Device Marking
FDB8444
Device
FDB8444
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDB8445 | N-Channel PowerTrench㈢ MOSFET 40V, 70A, 9mOhm |
| FDB8447L | 40V N-Channel PowerTrench MOSFET |
| FDB8453LZ | N-Channel PowerTrench㈢ MOSFET |
| FDB8832 | N-Channel Logic Level PowerTrench MOSFET 30V, 80A, 2.1mOHM |
| FDB8860 | N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 80A, 2.6mOhm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDB8444_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 70A, 5.5m?? |
| FDB8444_F085 | 功能描述:MOSFET 40V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8444TS | 功能描述:MOSFET 40V N-Channel w/Temp Sensor RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8445 | 功能描述:MOSFET 40V N-Channel PwrTrch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8445_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 70A, 9m?? |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。